ESDALC6V1M3(2006) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDALC6V1M3 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
ESDALC6V1M3
Table 1. Absolute ratings (TAMB = 25° C - limiting values)
Symbol
Parameter
Value Unit
IEC61000-4-2 air discharge
VPP
ESD discharge
IEC61000-4-2 contact discharge
PPP
Peak pulse power dissipation (8/20 µs)(1)
Tj initial = TAMB
Ipp
Repetitive peak pulse current (8/20 µs)
Tj
Junction temperature
Tstg
Storage temperature range
TL
Maximum lead temperature for soldering during 10 s
TOP
Operating temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
± 15
kV
±8
30
W
3
A
125
°C
-55 + 150 ° C
260
°C
-40 + 125 ° C
Table 2. Electrical characteristics (TAMB = 25° C)
Symbol
Parameter
I
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
IF
VCL VBR VRM
VF
V
I RM
IR
Slope= 1/ Rd
I PP
Parameter
Test condition
Min
Typ
Max
Unit
VBR
IR = 1 mA
6.1
7.2
V
IRM
VRM = 5 V
0.5
µA
Rd
αT
IR = 1 mA
1.1
Ω
4.2
10-4/°C
C
VR = 0 V, F = 1 MHz, VOSC = 30 mV
11
pF
2/8
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