GS832018T-200 View Datasheet(PDF) - Giga Semiconductor

Part Name

Description

Manufacturer

GS832018T-200

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZInput Current

FTInput Current

Output Leakage Current (x36/x72)

Output Leakage Current (x18)

Output High Voltage

Output High Voltage

Output Low Voltage

Symbol

IIL

IIN1

IIN2

IOL

IOL

VOH2

VOH3

VOL

Preliminary

GS832018/32/36T-250/225/200/166/150/133

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–2 uA

–1 uA

–1 uA

–100 uA

–1 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

2 uA

1 uA

100 uA

1 uA

1 uA

1 uA

1 uA

—

—

0.4 V

Rev: 1.02 10/2004

15/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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