IRF630MFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
IRF630MFP Datasheet PDF : 14 Pages
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IRF630M - IRF630MFP
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
VDS
VDGR
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source Voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kW)
Gate- source voltage
Drain current (continuos) at TC = 25°C
Drain current (continuos) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO Insulation winthstand voltage (DC)
Tstg Storage temperature
Tj
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX.
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Value
Unit
IRF630M
IRF630MFP
200
200
± 20
9
9 (1)
5.7
5.7 (1)
36
36
75
30
0.6
0.24
5
5
--
2500
–65 to 150
150
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
TO-220
TO-220FP
1.67
4.17
62.5
300
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
5
A
350
mJ
3/14
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