IRF630M View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

IRF630M

N-channel 200V - 0.35Ω- 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

IRF630M - IRF630MFP

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250µA, VGS = 0

VDS = max rating

VDS = max rating,

TC = 125 °C

VGS = ± 20V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 4.5A

Min. Typ. Max. Unit

200

V

1

µA

50 µA

±100 nA

2

3

4

V

0.35 0.40 Ω

Table 5.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS > ID(on) x RDS(on)max,

ID = 4.5A

VDS = 25V, f = 1 MHz,

VGS = 0

td(on

tr

tr(Voff)

tf

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD = 100V, ID = 4.5A

RG = 4.7Ω VGS = 10V

Qg

Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDD = 160V, ID = 9A,

VGS = 10V

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

3

4

S

540 700 pF

90

pF

35

pF

10

14

ns

15

20

ns

12

17

ns

12

17

ns

31

45

nC

7.5

nC

9

nC

4/14

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