IRFY044C View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

Manufacturer

IRFY044C

N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS

Semelab - > TT Electronics plc  

IRFY044C

MECHANICAL DATA

Dimensions in mm (inches)

10.41

10.67

0.70

0.90

4.70

5.00

3

3

.56

.81

Dia.

123

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

VDSS

ID(cont)

RDS(on)

60V

20A

0.035Ω

FEATURES

• HERMETICALLY SEALED TO–220 METAL

0.89

1.14

PACKAGE

2.54

BSC

2.65

2.75

• SIMPLE DRIVE REQUIREMENTS

TO–220M – Metal Package

• LIGHTWEIGHT

Ceramic Lead Seals

• ALL LEADS ISOLATED FROM CASE

Pad 1 – Gate

Pad 2 – Drain

Pad 3 – Source

FULL ASSESSMENT LEVEL

SEQUENCE A

SEQUENCE B

SEQUENCE C

SEQUENCE D

AVAILABLE SCREENINGS

IRFY044C.MOD

IRFY044CJ

IRFY004C-A

IRFY044CJXV

IRFY004C-B

IRFY044CJTX

IRF044C-C

IRFY044C-D

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

VGS

Gate – Source Voltage

ID

Continuous Drain Current @ TC = 25°C

ID

Continuous Drain Current @ TC = 100°C

IDM

Pulsed Drain Current

PD

Power Dissipation @ TC = 25°C

Linear Derating Factor

±20V

20A

20A

128A

60W

0.48W/°C

TJ , Tstg

RθJC

RθJA

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

–55 to 150°C

2.1°C/W max.

80°C/W max.

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 11/95

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