ISL9305H
DCD1 AND DCD2 CONTROL REGISTER
DCD_PARAMETER, address 0x04h
TABLE 6. DCD_PARAMETER REGISTER
BIT NAME ACCESS RESET
DESCRIPTION
B7
-
-
0
Reserved
B6 DCD_PHASE R/W
0 DCD1 and DCD2 PWM switch
selection. 0-in phase; 1 to 180°
out-of-phase.
B5 DCD2_ULTRA R/W
B4 DCD1_ULTRA R/W
B3 DCD2_BLD R/W
0 Ultrasonic feature under PFM mode
for DCD2. 0-disabled; 1-enabled.
0 Ultrasonic feature under PFM mode
for DCD1. 0-disabled; 1-enabled.
1 Selection of DCD2 for active output
voltage discharge when disabled.
0-disabled; 1-enabled.
B2 DCD1_BLD R/W
1 Selection of DCD1 for active output
voltage discharge when disabled.
0-disabled; 1-enabled.
B1 DCD2_MODE R/W
B0 DCD1_MODE R/W
1 Selection on DCD2 of auto
PFM/PWM mode (= 1) or forced
PWM mode (= 0).
1 Selection on DCD1 of auto
PFM/PWM mode (= 1) or forced
PWM mode (= 0).
DCD OUTPUT VOLTAGE SLEW RATE CONTROL
REGISTER
DCD_SRCTL, address 0x06h
TABLE 8. DCD OUPUT VOLTAGE SLEW RATE CONTROL
REGISTER
BIT NAME ACCESS RESET
DESCRIPTION
B7 DCD2SR_2 R/W
B6 DCD2SR_1 R/W
B5 DCD2SR_0 R/W
0 DCD2 Slew Rate Setting, DCD2SR[2:0]:
000 to 0.225mV/µs
0 001 to 0.45mV/µs
1 010 to 0.90mV/µs
011 to 1.8mV/µs
100 to 3.6mV/µs
101 to 7.2mV/µs
110 to 14.4mV/µs
111 to immediate
B4 Reserve
-
0 Reserved
B3 DCD1SR_2 R/W
B2 DCD1SR_1 R/W
B1 DCD1SR_0 R/W
0 DCD1 Slew Rate Setting, DCD1SR[2:0]:
000 to 0.225mV/µs
0 001 to 0.45mV/µs
1 010 to 0.90mV/µs
011 to 1.8mV/µs
100 to 3.6mV/µs
101 to 7.2mV/µs
110 to 14.4mV/µs
111 to immediate
B0 Reserve
-
0 Reserved
SYSTEM CONTROL REGISTER
SYS_PARAMETER, address 0x05h
TABLE 7. SYS_PARAMETER REGISTER
BIT NAME ACCESS RESET
DESCRIPTION
B7
-
B6 I2C_EN
-
R/W
0 Reserved
0 I2C function enable. 0-disabled;
1-enabled
B5 DCDPOR_1 R/W
B4 DCDPOR_0 R/W
1 DCDPG Delay Time Setting,
DCDPG[1:0]:
0 00 to 1ms
01 to 50ms
10 to 150ms
11 to 200m
B3 LDO2_EN R/W
1 LDO2 enable selection. 0-disable,
1-enable.
B2 LDO1_EN R/W
1 LDO1 enable selection. 0-disable,
1-enable
B1 DCD2_EN R/W
1 DCD2 enable selection. 0-disable,
1-enable.
B0 DCD1_EN R/W
1 DCD2 enable selection. 0-disable,
1-enable
12
FN7724.0
November 8, 2010