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STM32F101X6 View Datasheet(PDF) - STMicroelectronics

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STM32F101X6 Datasheet PDF : 79 Pages
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STM32F101x4, STM32F101x6
Electrical characteristics
5.3.2
Table 8. General operating conditions (continued)
Symbol
Parameter
Conditions
Min Max Unit
PD
Power dissipation at TA =
85 °C(3)
LQFP64
LQFP48
VFQFPN36
444
363 mW
1000
TA
Ambient temperature
Maximum power dissipation –40 85
°C
Low power dissipation(4)
–40 105
°C
TJ
Junction temperature range
–40 105
°C
1. When the ADC is used, refer to Table 42: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 74).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 74).
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 9. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
VDD rise time rate
0
tVDD
VDD fall time rate
20
Max Unit
µs/V
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
Doc ID 15058 Rev 5
31/79

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