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STM32F101R6U6TR View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F101R6U6TR Datasheet PDF : 79 Pages
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 14.
Symbol
Maximum current consumption in Sleep mode, code running from Flash
or RAM
Parameter
Conditions
fHCLK
Max(1)
TA = 85 °C
Unit
36 MHz
14
External clock(2) all 24 MHz
10
peripherals enabled 16 MHz
7
IDD
Supply current in
Sleep mode
8 MHz
36 MHz
4
mA
5
External clock(2), all 24 MHz
4.5
peripherals disabled 16 MHz
4
8 MHz
3
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 15. Typical and maximum current consumptions in Stop and Standby modes
Typ(1)
Max
Symbol Parameter
Conditions
VDD/VBAT VDD/ VBAT VDD/VBAT TA = Unit
= 2.0 V = 2.4 V = 3.3 V 85 °C(2)
Regulator in Run mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF
-
Supply current (no independent watchdog)
in Stop mode Regulator in Low Power mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF
-
IDD
(no independent watchdog)
Low-speed internal RC oscillator and
independent watchdog ON
-
Supply current Low-speed internal RC oscillator ON,
in Standby
independent watchdog OFF
-
mode
Low-speed internal RC oscillator and
independent watchdog OFF, low-speed
-
oscillator and RTC OFF
IDD_VBAT
Backup domain
supply current
Low-speed oscillator and RTC ON
0.9
21.3
21.7
160
11.3
11.7
145
2.6
3.4
2.4
3.2
-
µA
-
1.7
2
3.2
1.1
1.4
1.9
1. Typical values are measured at TA = 25 °C.
2. Based on characterization, not rested in production.
36/79
Doc ID 15058 Rev 5

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