ST92F124V2QC View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ST92F124V2QC
STMicroelectronics
ST92F124V2QC Datasheet PDF : 429 Pages
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ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Comment
VOL
IWPU
Output Low Level
P4[7:6]-P6[5:4]
Output Low Level
All pins except OSCOUT
Weak Pull-up Current
P2[7:4]-P2[1:0]-P3[7:0]
P4[7:5]-P4[3:1]-P5.3-P6[7:6]-P6[3:0]-
P7[7:0]-P8[7:0]-P9[7:0]
Weak Pull-up Current
P6[5:4]-AS-DS-RW
ILKIO I/O Pin Input Leakage
ILKIOD I/O Pin Open Drain Input Leakage
ADC Conv.Input leakage current on ro-
|ILKADC| bust pins
ADC Conv.Input leakage current
IIO Load current
⎥IOV⎥
SRR
SRF
Overload Current
Slew Rate Rise
Slew Rate Fall
Push Pull or
Open Drain mode,
IOL=8mA,
EMR1.BSZ bit = 1 (3)
Push Pull or
Open Drain mode,
IOL=2mA
Bidirectional
Weak Pull-up mode
VIN = 0V
Bidirectional
Weak Pull-up mode
VIN = 0V
Input or Tri-State mode,
0V < VIN < VDD
Input or Tri-State mode,
0V < VIN < VDD
VIN<VSS, | IIN |< 400µA
on robust analog pin
VSS≤VIN≤VDD
P4[7:6]-P6[5:4]
EMR1.BSZ bit = 1 (3)
P4[7:6]-P6[5:4]
EMR1.BSZ bit = 0 (3)
All other pins except
OSCOUT
(5)
(6)
(6)
Value
Min
Typ
(1)
Max
Unit
0.4
V
0.4
V
50
100
300
µA
100
220
450
µA
–1
1
µA
–1
1
µA
6
µA
1
µA
8(4)
2 (4)
mA
2 (4)
5 (4)
mA
20
30
ns
20
30
ns
Note:
(1) Unless otherwise stated, typical data are based on TA= 25°C and VDD= 5V. They are only reported for design guide lines not tested in
production.
(2) Value guaranteed by characterisation.
(3) For a description of the EMR1 Register - BSZ bit refer to the External Memory Interface Chapter.
(4) Value guaranteed by Design.
(5) Not tested in production, guaranteed by product characterisation. An overload condition occurs when the input voltage on any pin ex-
ceeds the specified voltage range.
(6) Indicative values extracted from design simulation, 20% to 80% on 50pF load, EMR1.BSZ bit =0.
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