M25P40SVMN6TP/4 View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
Manufacturer
M25P40SVMN6TP/4
Numonyx -> Micron
M25P40SVMN6TP/4 Datasheet PDF : 57 Pages
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DC and AC parameters
M25P40
Table 15.
Symbol
DC characteristics (device grade 3)
Parameter
Test condition (in addition to
those in Table 10)
Min(1)
Max(1) Unit
ILI Input leakage current
ILO Output leakage current
ICC1 Standby current
ICC2 Deep Power-down current
ICC3 Operating current (READ)
ICC4 Operating current (PP)
ICC5 Operating current (WRSR)
ICC6 Operating current (SE)
ICC7 Operating current (BE)
VIL Input low voltage
VIH Input high voltage
VOL Output low voltage
VOH Output high voltage
1. This is preliminary data.
± 2 μA
± 2 μA
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
C = 0.1VCC / 0.9.VCC at 25 MHz
and 75 MHz, Q = open
100 μA
50 μA
8 mA
C = 0.1VCC / 0.9.VCC at 20 MHz
and 33 MHz, Q = open
4 mA
S = VCC
S = VCC
S = VCC
S = VCC
IOL = 1.6 mA
IOH = –100 μA
15 mA
15 mA
15 mA
15 mA
– 0.5 0.3VCC V
0.7VCC VCC+0.4 V
0.4 V
VCC–0.2
V
Table 16.
Instruction times, process technology T9HX(1)
Test conditions specified in Table 10 and Table 18
Symbol Alt.
Parameter
Min. Typ. Max. Unit
tW
tPP (2)
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
1.3
15
ms
0.8
int (n/8) × 5
ms
0.025 (2)
tSE
Sector Erase cycle time
tBE
Bulk Erase cycle time
0.6
3
s
4.5
10
s
1. Technology T9HX devices are identified by process identification digit "4" in the device marking and
process letter "B" in the part number.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
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