M25P80-VMN3TP View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M25P80-VMN3TP

8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface

Numonyx -> Micron 

M25P80

DC and AC parameters

Table 15. AC characteristics (75 MHz operation, Grade 6) (continued)

75 MHz available only for products made in T9HX technology, identified with Process digit “4”(1)

Test conditions specified in Table 10 and Table 12

Symbol Alt.

Parameter

Min.

Typ.(2)

Max. Unit

Page Program cycle time (256 byte)

0.64

tPP (7)

Page Program cycle time (n bytes, where n = 1 to 4)

Page Program cycle time (n bytes, where n = 5 to

256)

0.01

5 ms

int(n/8) × 0.02(8)

tSE

Sector erase cycle time

0.6

3

s

tBE

Bulk erase cycle time

8

20

s

1. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12: Part numbering.

2. Typical values given for TA = 25°C.

3. tCH + tCL must be greater than or equal to 1/ fC

4. Value guaranteed by characterization, not 100% tested in production.

5. Expressed as a slew-rate.

6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.

7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one

sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤256)

8. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.

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