M25PE40-VMN6G View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M25PE40-VMN6G
STMicroelectronics
M25PE40-VMN6G Datasheet PDF : 37 Pages
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M25PE40
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-Byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4..
Every instruction sequence starts with a one-Byte
instruction code. Depending on the instruction,
this might be followed by address Bytes, or by data
Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read) or Read
Status Register (RDSR) instruction, the shifted-in
instruction sequence is followed by a data-out se-
quence. Chip Select (S) can be driven High after
any bit of the data-out sequence is being shifted
out.
In the case of a Page Write (PW), Page Program
(PP), Page Erase (PE), Sector Erase (SE), Write
Enable (WREN), Write Disable (WRDI), Deep
Power-down (DP) or Release from Deep Power-
down (RDP) instruction, Chip Select (S) must be
driven High exactly at a Byte boundary, otherwise
the instruction is rejected, and is not executed.
That is, Chip Select (S) must driven High when the
number of clock pulses after Chip Select (S) being
driven Low is an exact multiple of eight.
All attempts to access the memory array during a
Write cycle, Program cycle or Erase cycle are ig-
nored, and the internal Write cycle, Program cycle
or Erase cycle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-Byte Instruction Code
Address
Bytes
WREN Write Enable
0000 0110
06h
0
WRDI Write Disable
0000 0100
04h
0
RDID
Read Identification
1001 1111
9Fh
0
RDSR Read Status Register
0000 0101
05h
0
READ Read Data Bytes
0000 0011
03h
3
FAST_READ Read Data Bytes at Higher Speed
0000 1011
0Bh
3
PW
Page Write
0000 1010
0Ah
3
PP
Page Program
0000 0010
02h
3
PE
Page Erase
1101 1011
DBh
3
SE
Sector Erase
1101 1000
D8h
3
DP
Deep Power-down
1011 1001
B9h
0
RDP
Release from Deep Power-down
1010 1011
ABh
0
Dummy
Bytes
0
0
0
0
0
1
0
0
0
0
0
0
Data
Bytes
0
0
1 to 3
1 to ∞
1 to ∞
1 to ∞
1 to 256
1 to 256
0
0
0
0
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