M28F201-150XN6R View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M28F201-150XN6R

2 Mb (256K x 8, Chip Erase) FLASH MEMORY

STMicroelectronics 

M28F201

Figure 7. Electronic Signature Command Waveforms

VPP

A0-A17

tVPHEL

E

tELWL

G

tGHWL

W

tWLWH

tDVWH

tWHEH

tWHDX

DQ0-DQ7

COMMAND

READ ELECTRONIC

SIGNATURE SET-UP

tAVQV

00000h-00001h

tELQV

tWHGL

tGLQV

tAXQX

tEHQZ

tGHQZ

DATA OUT

READ

MANUFACTURER

OR DEVICE

AI00644

Program and Program Verify Modes. The Pro-

gram Mode is set-up by writing 40h to the command

register. This is followed by a second write cycle

which latches the address and data of the byte to

be programmed. The rising edge of W during this

second cycle starts the programming operation.

Programming is followed by a Program Verify of the

data written.

Program Verify Mode is set-up by writing C0h to the

command register. The rising edge of W during the

set-up of the Program Verify Mode stops the Pro-

gramming operation. The following read cycle, of

the address already latched during programming,

is made with an internally generated margin volt-

age applied, reading valid data indicates that all bits

have been programmed.

Reset Mode. This command is used to safely abort

Erase or Program Modes. The Reset Mode is

set-up and performed by writing FFh two times to

the command register. The command should be

followed by writing a valid command to the the

command register (for example Read).

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