M29W128GL70N6E View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128GL70N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

M29W128GH, M29W128GL

DC and AC parameters

Figure 11. AC measurement I/O waveform

VCCQ

0V

VCCQ/2

AI05557b

Table 23. Power-up waiting timings

Symbol

Alt.

Parameter

M29W128GH,

M29W128GL

Unit

70 or 60(1) ns 80 ns

tVCHVCQH

VCC(2) High to VCCQ(2) High

Min

0

µs

tVCHRH(3)

tVCS VCC High to rising edge of RP

Min

35

µs

tVCQHRH(3)

tVIOS VCCQ High to rising edge of RP

Min

0

µs

tRHEL

tRH RP High to Chip Enable Low

Min

50

µs

tRHWL

RP High to Write Enable Low

Min

500

µs

1. Only available upon customer request.

2. VCC and VCCQ ramps must be synchronized during power-up.

3. If RP is not stable for tVCHRH or tVCQHRH, the device does not permit any Read and Write operations and a hardware reset

is required.

Figure 12. Power-up waiting timings

tVCHVCQH

VCC

VCCQ

E

RP

W

tRHEL

tVCQHRH

tVCHRH

tRHWL

AI14247

61/94

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