M29W640FT70N6E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29W640FT70N6E

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W640FT, M29W640FB

4 Command Interface

Table 7. Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ(1) (2)

Max(2)

Unit

Chip Erase

Block Erase (64 KBytes)

Erase Suspend Latency Time

Program (Byte or Word)

Double Byte

Double Word /Quadruple Byte Program

Quadruple Word / Octuple Byte Program

Chip Program (Byte by Byte)

Chip Program (Word by Word)

Chip Program (Double Word/Quadruple Byte Program)

Chip Program (Quadruple Word/Octuple Byte Program)

Program Suspend Latency Time

Program/Erase Cycles (per Block)

Data Retention

80

0.8

10

10

10

10

80

40

20

10

100,000

20

400(3)

6(4)

50(4)

200(3)

200(3)

200(3)

200(3)

400(3)

200(3)

100(3)

50(3)

4

s

s

µs

µs

µs

µs

µs

s

s

s

s

µs

cycles

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

29/72

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