M48Z2M1Y-85PL1(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M48Z2M1Y-85PL1
(Rev.:2003)

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM

STMicroelectronics 

M48Z2M1Y, M48Z2M1V

Table 9. Power Down/Up AC Characteristics

Symbol

Parameter(1)

Min

Max

Unit

tER

E Recovery Time

40

120

ms

tF(2)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

M48Z2M1Y

10

µs

tFB(3)

VPFD (min) to VSO VCC Fall Time

M48Z2M1V 150

µs

tR

VPFD (min) to VPFD (max) VCC Rise Time

10

µs

tWP

Write Protect Time from VCC = VPFD

M48Z2M1Y

40

150

µs

M48Z2M1V

40

250

µs

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-

es VPFD (min).

3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

Table 10. Power Down/Up Trip Points DC Characteristics

Symbol

Parameter(1,2)

Min

Typ

Max

VPFD Power-fail Deselect Voltage

M48Z2M1Y

4.2

4.3

4.5

M48Z2M1V

2.8

2.9

3.0

M48Z2M1Y

3.0

VSO

Battery Back-up Switchover Voltage

M48Z2M1V

2.45

tDR(3)

Expected Data Retention Time

10

Note: 1. All voltages referenced to VSS.

2. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

3. At 25°C; VCC = 0V.

Unit

V

V

V

V

YEARS

12/17

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