M58BW016DB(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58BW016DB
(Rev.:2003)

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

Table 10. Program, Erase Times and Program Erase Endurance Cycles

Parameters

M58BW016B/D

Min

Typ

Max

VPP = VDD VPP = 12V VPP = VDD VPP = 12V

Parameter Block (64Kb) Program

0.030

0.016

0.060

0.032

Main Block (512Kb) Program

0.23

0.13

0.46

0.26

Parameter Block Erase

0.8

0.64

1.8

1.5

Main Block Erase

1.5

0.9

3

1.8

Program Suspend Latency Time

3

10

Erase Suspend Latency Time

10

30

Program/Erase Cycles (per Block)

100,000

Note: TA = –40 to 125°C, VDD = 2.7V to 3.6V, VDDQ = 2.4V to VDD

Unit

s

s

s

s

µs

µs

cycles

27/63

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