M58BW016DB(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58BW016DB
(Rev.:2003)

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

Table 27. CFI - Device Voltage and Timing Specification

Address A0-A18

Data

Description

1Bh

27h (1)

VDD min, 2.7V

1Ch

36h (1)

VDD max, 3.6V

1Dh

B4h (2) VPP min

1Eh

C6h (2) VPP max

1Fh

00h (3) 2n ms typical time-out for Word, DWord prog – Not Available

20h

00h (3) 2n ms, typical time-out for max buffer write – Not Available

21h

0Ah

2n ms, typical time-out for Erase Block

22h

00h (3) 2n ms, typical time-out for chip erase – Not Available

23h

00h (3) 2n x typical for Word Dword time-out max – Not Available

24h

00h

2n x typical for buffer write time-out max – Not Available

25h

04h

2n x typical for individual block erase time-out maximum

26h

00h (3) 2n x typical for chip erase max time-out – Not Available

Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.

2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.

3. Not supported.

Table 28. Device Geometry Definition

Address A0-A18

Data

Description

27h

15h

2n number of bytes memory size

28h

03h

Device Interface Sync./Async.

29h

00h

Organization Sync./Async.

2Ah

00h

Page size in bytes, 2n

2Bh

00h

2Ch

02h

Bit7-0 = number of Erase Block Regions in device

2Dh

1Eh

Number (n-1) of blocks of identical size; n=31

2Eh

00h

2Fh

00h

Erase Block region information x 256 bytes per

30h

01h

Erase Block (64Kbytes)

31h

07h

Number (n-1) of blocks of identical size; n=8

32h

00h

33h

20h

Erase Block region information x 256 bytes per

34h

00h

Erase Block (8Kbytes)

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