M69KB096AB
9 DC and AC parameters
Table 17. Asynchronous Read AC Characteristics
Symbol
Alt.
Parameter(1)
Min Max Unit
tAVQV
tAA Address Valid to Output Valid
70 ns
tLLQV
tAADV Latch Enable Low to Output Valid
70 ns
tLHAX
tLHRL
tAVH
Latch Enable High to Address Transition
Latch Enable High to Configuration Register Low
2
ns
tAVLH
tRHLH
tAVS
Address Valid to L High
Configuration Register High to L High
5
ns
tBLQV
tBA Upper/Lower Byte Enable Low to Output Valid
70 ns
tBHQZ(2)
tBHZ Upper/Lower Byte Enable High to Output Hi-Z
8
ns
tBLQX(3)
tBLZ Upper/Lower Byte Enable Low to Output Transition
10
ns
tELTV
tCEW Chip Enable Low to WAIT Valid
1
7.5 ns
tELQV
tCO Chip Enable Low to Output Valid
70 ns
tELLH
tCVS Chip Enable Low to L High
7
ns
tEHEL
tCPH
Chip Enable High between Subsequent Asynchronous
Operations
5
ns
tEHQZ(2)
tHZ
Output Enable High to Output Hi-Z
Chip Enable High to Output Hi-Z
8
ns
tELQX(3)
tLZ Chip Enable Low to Output Transition
10
ns
tGLQV
tOE Output Enable Low to Output Valid
20 ns
tGHQZ(2)
tOHZ Output Enable Low to Output Hi-Z
8
ns
tGLQX(3)
tOLZ Output Enable Low to Output Transition
3
ns
tAVAX
tRC Read Cycle Time
70
ns
tLLLH
tVP Latch Enable Low Pulse Width
5
ns
1. These timings have been obtained in the measurement conditions described in Table 14: Operating and AC Measurement
Conditions and Figure 13: AC Measurement Load Circuit.
2. The Hi-Z timings measure a 100mV transition from either VOH or VOL to VCCQ/2.
3. The Low-Z timings measure a 100mV transition from the Hi-Z (VCCQ/2) level to either VOH or VOL.
Table 18. Asynchronous Page Read AC Characteristics
Symbol
Alt.
Parameter(1)
Min Max Unit
tAVQV1
tAPA Page Access Time
20
ns
tAVAV
tPC Page Cycle Time
20
ns
tELEH
tCEM Maximum Chip Enable Pulse Width
4
µs
tAVQX
tOH Data Hold from Address Change
5
ns
1. These timings have been obtained in the measurement conditions described in Figure 14: Operating and AC Measurement
Conditions and Figure 13: AC Measurement Load Circuit.
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