M95160-RMN6TP(2014) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M95160-RMN6TP
(Rev.:2014)

16-Kbit serial SPI bus EEPROM with high-speed clock

STMicroelectronics 

M95160 M95160-W M95160-R M95160-DF

DC and AC parameters

Table 11. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

CL

Load capacitance

Input rise and fall times

30

pF

-

50

ns

Input pulse voltages

Input and output timing reference voltages

0.2 VCC to 0.8 VCC

V

0.3 VCC to 0.7 VCC

V

Figure 19. AC measurement I/O waveform

)NPUTVOLTAGELEVELS

6##

6##

)NPUTANDOUTPUT

TIMINGREFERENCELEVELS

6##

6##

!)#

Table 12. Cycling performance

Symbol

Parameter(1)

Test conditions

Min. Max.

Unit

Ncycle

Write cycle endurance

TA ≤ 25 °C,

VCC(min) < VCC < VCC(max)

TA = 85 °C,

VCC(min) < VCC < VCC(max)

1. Cycling performance for products identified by process letter K.

- 4,000,000

Write cycle

- 1,200,000

Table 13. Memory cell data retention

Parameter

Test conditions

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. For products identified by process letter K. The data retention behavior is checked in production, while the

200-year limit is defined from characterization and qualification results.

Symbol

Table 14. Capacitance

Parameter

Test conditions(1) Min.

COUT Output capacitance (Q)

VOUT = 0 V

-

Input capacitance (D)

VIN = 0 V

-

CIN

Input capacitance (other pins)

VIN = 0 V

-

1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.

Max.

8

8

6

Unit

pF

pF

pF

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