PHP50N06 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PHP50N06

PowerMOS transistor

Philips Electronics 

Philips Semiconductors

PowerMOS transistor

Product specification

PHP50N06

VGS / V

12

10

8

BUK456-50

VDS / V =10

40

6

4

2

0

0

20

40

QG / nC

Fig.13. Typical turn-on gate-charge characteristics.

VGS = f(QG); conditions: ID = 52 A; parameter VDS

IF / A

100

BUK456-50A

50

150 C

25 C

0

0

1

2

VSDS / V

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

August 1996

5

Rev 1.000

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