MLN1030SS(RevA) View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
MLN1030SS Datasheet PDF : 1 Pages
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MLN1030SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SS is Designed
for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
10 A
VCB
60 V
VCE
PDISS
TJ
TSTG
θJC
35 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
20 OC/W
PACKAGE STYLE .205 4L STUD
D
A
C
B
G
E
H
F
#8-32UNC
J
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
MAXIMUM
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
ORDER CODE: ASI10625
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5.0
10
100
UNITS
V
V
V
mA
---
Cob
VCB = 28 V
f = 1.0 MHz
5.0
pF
PGE
VCE = 20 V
POUT = 1.0 W
ICQ = 150 mA
f = 1.0 GHz
10
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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