M29W800AT, M29W800AB
Table 18. Write AC Characteristics, W Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Symbol
Alt
Parameter
tAVAV
tWC Address Valid to Next Address Valid
tAVWL
tAS Address Valid to Write Enable Low
tDVWH
tDS Input Valid to Write Enable High
tELWL
tCS Chip Enable Low to Write Enable Low
tGHWL
Output Enable High to Write Enable Low
tPHPHH (1, 2) tVIDR RP Rise Time to VID
tPHWL (1)
tRSP RP High to Write Enable Low
tPLPX
tRP RP Pulse Width
tVCHEL
tVCS VCC High to Chip Enable Low
tWHDX
tDH Write Enable High to Input Transition
tWHEH
tCH Write Enable High to Chip Enable High
tWHGL
tOEH Write Enable High to Output Enable Low
tWHRL (1) tBUSY Program Erase Valid to RB Delay
tWHWL
tWPH Write Enable High to Write Enable Low
tWLAX
tAH Write Enable Low to Address Transition
tWLWH
tWP Write Enable Low to Write Enable High
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
M29W800AT / M29W800AB
100
120
VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
CL = 30pF
CL = 100pF
Min
Max
Min
Max
100
120
0
0
45
50
0
0
0
0
500
500
4
4
500
500
50
50
0
0
0
0
0
0
90
90
30
30
45
50
35
50
Unit
ns
ns
ns
ns
ns
ns
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
23/40