P1203CC62TP View Datasheet(PDF) - Teccor Electronics

Part Name

Description

Manufacturer

P1203CC62TP

100 mA, battrax quad negative SLIC protector

Teccor Electronics 

Construction and Operation

amounts of current because of the low voltage drop (VT) across the device. Once the

current flowing through the device is either interrupted or falls below a minimum holding

current (IH), the SIDACtor resets, returning to its off state. If the IPP rating is exceeded, the

SIDACtor device typically becomes a permanent short circuit.

Physics

The SIDACtor device is a semiconductor device which is characterized as having four

layers of alternating conductivity: PNPN. (Figure 5.2) The four layers include an emitter

layer, an upper base layer, a mid-region layer, and a lower base layer. The emitter is

sometimes referred to as a cathode region, with the lower base layer being referred to as

an anode region.

As the voltage across the SIDACtor device increases and exceeds the device’s VDRM, the

electric field across the center junction reaches a value sufficient to cause avalanche

multiplication. As avalanche multiplication occurs, the impedance of the device begins to

decrease, and current flow begins to increase until the SIDACtor device’s current gain

exceeds unity. Once unity is exceeded, the SIDACtor device switches from a high

impedance (measured at VS) to a low impedance (measured at VT) until the current flowing

through the device is reduced below its holding current (IH).

P

N

N

N

P

Figure 5.2 Geometric Structure of Bidirectional SIDACtor devices

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© 2002 Teccor Electronics

SIDACtor® Data Book and Design Guide

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