PHP8ND50E View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PHP8ND50E Datasheet PDF : 10 Pages
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Philips Semiconductors
Product specification
PowerMOS transistors
PHP8ND50E, PHB8ND50E, PHW8ND50E
FREDFET, Avalanche energy rated
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
d
g
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 8.5 A
RDS(ON) ≤ 0.85 Ω
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP8ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW8ND50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB8ND50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB) SOT404
SOT429 (TO247)
PIN DESCRIPTION
tab
tab
1 gate
2 drain1
3 source
tab drain
1 23
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
August 1998
1
Rev 1.100
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