PHP110NQ06LT View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PHP110NQ06LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB110NQ06LT
N-channel TrenchMOS™ logic level FET
240
ID
(A)
Tj = 25 °C
160
10 V 5 V
03ap95
4.6 V
4.4 V
4.2 V
4V
75
VDS > ID x RDSon
ID
(A)
50
03ap97
3.6 V
80
25
3.2 V
Tj = 175 °C
25 °C
VGS = 2.8 V
0
0
1
2
3 VDS (V) 4
0
0
1
2
3
4
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ap96
15
2
Tj = 25 °C
VGS = 4.2 V 4.4 V
RDSon
a
(mΩ)
4.6 V
1.5
5V
10
10 V
1
5
0.5
03ne89
0
0
80
Tj = 25 °C
160
240
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13175
Product data
Rev. 01 — 04 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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