PHP45NQ11T View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PHP45NQ11T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

PHP45NQ11T

N-channel TrenchMOS standard level FET

Rev. 02 — 19 November 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ Low conduction losses due to low

on-state resistance

„ Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

„ DC-to-DC convertors

„ Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

Conditions

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

ID

drain current

Tmb = 25 °C; VGS = 10 V;

see Figure 1 and 3

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

Dynamic characteristics

QGD

gate-drain charge VGS = 10 V; ID = 45 A;

VDS = 80 V; Tj = 25 °C;

see Figure 11

Static characteristics

RDSon

drain-source

on-state resistance

VGS = 10 V; ID = 25 A;

Tj = 25 °C;

see Figure 9 and 10

Min Typ Max Unit

-

-

105 V

-

-

47 A

-

-

150 W

-

23.2 -

nC

-

19 25 mΩ

Share Link: