PHP45NQ11T View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PHP45NQ11T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

PHP45NQ11T

N-channel TrenchMOS standard level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

VDGR

VGS

ID

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

IDM

peak drain current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

Tj ≥ 25 °C; Tj ≤ 175 °C

Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ

VGS = 10 V; Tmb = 100 °C; see Figure 1

VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3

tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3

Tmb = 25 °C; see Figure 2

IS

source current

ISM

peak source current

Avalanche ruggedness

Tmb = 25 °C

tp ≤ 10 µs; pulsed; Tmb = 25 °C

EDS(AL)S

non-repetitive

VGS = 10 V; Tj(init) = 25 °C; ID = 18 A; Vsup ≤ 100 V;

drain-source avalanche RGS = 50 Ω; tp = 120 µs; unclamped

energy

Min Max Unit

-

105 V

-

105 V

-20 20

V

-

33

A

-

47

A

-

188 A

-

150 W

-55 175 °C

-55 175 °C

-

47

A

-

188 A

-

160 mJ

120

Ider

(%)

80

03aa24

120

Pder

(%)

80

03aa16

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

PHP45NQ11T_2

Product data sheet

Rev. 02 — 19 November 2009

© NXP B.V. 2009. All rights reserved.

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