PIC12CR509AT-04 View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC12CR509AT-04 Datasheet PDF : 113 Pages
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PIC12C5XX
11.1 DC CHARACTERISTICS:
PIC12C508/509 (Commercial, Industrial, Extended)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
–40°C ≤ TA ≤ +125°C (extended)
Parm
No.
Characteristic
Sym Min Typ(1) Max Units
Conditions
D001 Supply Voltage
VDD 2.5
3.0
5.5 V FOSC = DC to 4 MHz (Commercial/
Industrial)
5.5 V FOSC = DC to 4 MHz (Extended)
D002 RAM Data Retention
VDR
1.5*
Voltage(2)
V Device in SLEEP mode
D003 VDD Start Voltage to
VPOR
VSS
ensure Power-on Reset
V See section on Power-on Reset for details
D004 VDD Rise Rate to ensure SVDD 0.05
Power-on Reset
*
V/ms See section on Power-on Reset for details
Supply Current(3)
D010
D010C
D010A
IDD — .78 2.4 mA XT and EXTRC options (4)
FOSC = 4 MHz, VDD = 5.5V
— 1.1 2.4 mA INTRC Option
FOSC = 4 MHz, VDD = 5.5V
— 10 27 µA LP OPTION, Commercial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
— 14 35 µA LP OPTION, Industrial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
— 14 35 µA LP OPTION, Extended Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
Power-Down Current (5)
D020
IPD — 0.25 4
D021
— 0.25 5
D021B
— 2 18
µA VDD = 3.0V, Commercial WDT disabled
µA VDD = 3.0V, Industrial WDT disabled
µA VDD = 3.0V, Extended WDT disabled
D022
∆IWDT — 3.75 8
— 3.75 9
— 3.75 14
µA VDD = 3.0V, Commercial
µA VDD = 3.0V, Industrial
µA VDD = 3.0V, Extended
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
guidance only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as
bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an
impact on the current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current
is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or
VSS.
DS40139E-page 66
© 1999 Microchip Technology Inc.
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