PIC12F629-I/SN View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC12F629-I/SN Datasheet PDF : 132 Pages
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PIC12F629/675
12.3 DC Characteristics: PIC12F629/675-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020
D021
D022
D023
D024
D025
D026
Power-down Base Current — 0.99 700 nA
(IPD)
— 1.2 770 nA
2.0 WDT, BOD, Comparators, VREF,
3.0 and T1OSC disabled
— 2.9 995 nA
— 0.3 1.5 µA
5.0
2.0 WDT Current(1)
— 1.8 3.5 µA
3.0
— 8.4 17 µA
—
58
70
µA
5.0
3.0 BOD Current(1)
— 109 130 µA
— 3.3 6.5 µA
5.0
2.0 Comparator Current(1)
— 6.1 8.5 µA
3.0
— 11.5 16 µA
—
58
70
µA
5.0
2.0 CVREF Current(1)
—
85 100 µA
3.0
— 138 160 µA
— 4.0 6.5 µA
5.0
2.0 T1 OSC Current(1)
— 4.6 7.0 µA
3.0
— 6.0 10.5 µA
— 1.2 775 nA
5.0
3.0 A/D Current(1)
— 0.0022 1.0 µA
5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral ∆ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
DS41190C-page 88
2003 Microchip Technology Inc.
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