PIC16C55T/SO View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16C55T/SO

EPROM/ROM-Based 8-bit CMOS Microcontroller Series

Microchip Technology 

PIC16C5X

17.1

DC Characteristics:PIC16C54C/C55A/C56A/C57C/C58B-04, 20 (Commercial, Industrial)

PIC16LC54C/LC55A/LC56A/LC57C/LC58B-04 (Commercial, Industrial)

PIC16CR54C/CR56A/CR57C/CR58B-04, 20 (Commercial, Industrial)

PIC16LCR54C/LCR56A/LCR57C/LCR58B-04 (Commercial, Industrial)

PIC16LC5X

PIC16LCR5X

(Commercial, Industrial)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature

0C  TA  +70C for commercial

–40C  TA  +85C for industrial

PIC16C5X

PIC16CR5X

(Commercial, Industrial)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature

0C  TA  +70C for commercial

–40C  TA  +85C for industrial

Param

No.

Symbol

Characteristic/Device

Min Typ† Max Units

Conditions

VDD Supply Voltage

D001

PIC16LC5X 2.5 — 5.5 V –40C TA + 85C, 16LCR5X

2.7 — 5.5 V –40C TA  0C, 16LC5X

2.5 — 5.5 V

0C TA + 85C 16LC5X

D001A

PIC16C5X

RC, XT, LP and HS mode

3.0 — 5.5 V from 0 - 10 MHz

4.5 — 5.5 V from 10 - 20 MHz

D002

VDR RAM Data Retention Volt-

age(1)

— 1.5* — V Device in SLEEP mode

D003

VPOR VDD Start Voltage to ensure

Power-on Reset

— VSS —

V See Section 5.1 for details on

Power-on Reset

D004

SVDD VDD Rise Rate to ensure

Power-on Reset

0.05* —

— V/ms See Section 5.1 for details on

Power-on Reset

Legend: Rows with standard voltage device data only are shaded for improved readability.

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5V, 25C, unless otherwise stated. These parameters are for design guidance only, and

are not tested.

Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading,

oscillator type, bus rate, internal code execution pattern and temperature also have an impact on the current con-

sumption.

a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square wave,

from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled

as specified.

b) For standby current measurements, the conditions are the same, except that the device is in SLEEP mode.

The power-down current in SLEEP mode does not depend on the oscillator type.

3: Does not include current through REXT. The current through the resistor can be estimated by the formula:

IR = VDD/2REXT (mA) with REXT in k.

DS30453E-page 134

Preliminary

 1997-2013 Microchip Technology Inc.

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