PIC16C73B-20E/SO View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16C73B-20E/SO

8-Bit CMOS Microcontrollers with A/D Converter

Microchip Technology 

PIC16C63A/65B/73B/74B

PIC16LC63A/65B/73B/74B-04

‡PIC16C63A/65B/73B/74B-04

‡PIC16C6A/65B/73B/74B-20

Param

No.

Sym

Characteristic

Standard Operating Conditions (unless otherwise stated)

Operating temperature 0°C ≤ TA ≤ +70°C for commercial

-40°C ≤ TA ≤ +85°C for industrial

Standard Operating Conditions (unless otherwise stated)

Operating temperature 0°C ≤ TA ≤ +70°C for commercial

-40°C ≤ TA ≤ +85°C for industrial

-40°C ≤ TA ≤ +125°C for extended

Min Typ† Max Units

Conditions

IDD Supply Current (Notes 2, 5)

D010

D010A

PIC16LCXXX

–

0.6 2.0 mA XT, RC osc modes:

FOSC = 4 MHz, VDD = 3.0V (Note 4)

–

22.5 48

µA LP osc mode:

FOSC = 32 kHz, VDD = 3.0V, WDT disabled

D010

D013

PIC16CXXX –

–

2.7 5

7

10

mA XT, RC osc modes:

FOSC = 4 MHz, VDD = 5.5 V (Note 4)

mA HS osc mode:

FOSC = 20 MHz, VDD = 5.5 V

IPD Power-down Current (Notes 3, 5)

D020

D021

D021A

PIC16LCXXX

–

–

–

7.5 20

0.9 3

0.9 3

µA VDD = 3.0V, WDT enabled, -40°C to +85°C

µA VDD = 3.0V, WDT disabled, 0°C to +70°C

µA VDD = 3.0V, WDT disabled, -40°C to +85°C

D020

D021

D021A

D021B

PIC16CXXX

–

10.5 42

µA VDD = 4.0V, WDT enabled, -40°C to +85°C

–

1.5 16

µA VDD = 4.0V, WDT disabled, 0°C to +70°C

–

1.5 19

µA VDD = 4.0V, WDT disabled, -40°C to +85°C

–

2.5 19

µA VDD = 4.0V, WDT disabled, -40°C to +125°C

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and

are not tested.

‡ When specification values of standard devices differ from those of extended voltage devices, they are shown in gray.

Note 1: This is the limit to which VDD can be lowered without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin

loading and switching rate, oscillator type, internal code execution pattern and temperature also have an impact

on the current consumption. The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is mea-

sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

4: For RC osc mode, current through REXT is not included. The current through the resistor can be estimated by

the formula Ir = VDD/2REXT (mA) with REXT in kOhm.

5: Timer1 oscillator (when enabled) adds approximately 20 µA to the specification. This value is from character-

ization and is for design guidance only. This is not tested.

6: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be

added to the base IDD or IPD measurement.

7: When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.

8: In RC oscillator mode, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended that the

PICmicro device be driven with external clock in RC mode.

9: The leakage current on the MCLR/VPP pin is strongly dependent on the applied voltage level. The specified lev-

els represent normal operating conditions. Higher leakage current may be measured at different input voltages.

10: Negative current is defined as current sourced by the pin.

 2000 Microchip Technology Inc.

DS30605C-page 117

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