DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PIC16C65B-04E/SP View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC16C65B-04E/SP
Microchip
Microchip Technology 
PIC16C65B-04E/SP Datasheet PDF : 184 Pages
First Prev 111 112 113 114 115 116 117 118 119 120 Next Last
PIC16C63A/65B/73B/74B
PIC16LC63A/65B/73B/74B-04
PIC16C63A/65B/73B/74B-04
PIC16C6A/65B/73B/74B-20
Param
No.
Sym
Characteristic
Standard Operating Conditions (unless otherwise stated)
Operating temperature 0°C TA +70°C for commercial
-40°C TA +85°C for industrial
Standard Operating Conditions (unless otherwise stated)
Operating temperature 0°C TA +70°C for commercial
-40°C TA +85°C for industrial
-40°C TA +125°C for extended
Min TypMax Units
Conditions
Input High Voltage
VIH I/O ports
D040
with TTL buffer
2.0
VDD
V 4.5 V VDD 5.5V
D040A
0.25 VDD +
0.8V
VDD
V For entire VDD range
D041
with Schmitt
Trigger buffer
0.8 VDD VDD
V For entire VDD range
D042
MCLR
0.8 VDD VDD
V
D042A
OSC1 (in XT, HS, and 0.7 VDD VDD
LP modes)
V (Note 8)
D043
OSC1 (in RC mode) 0.9 VDD VDD
V
Input Leakage
Current (Notes 9, 10)
D060
IIL I/O ports
±1
µA Vss VPIN VDD,
Pin at hi-impedance
D061
MCLR, RA4/T0CKI
±5
µA Vss VPIN VDD
D063
OSC1
±5
µA Vss VPIN VDD,
XT, HS and LP osc modes
D070 IPURB PORTB Weak Pull-up 50 250 400 µA VDD = 5V, VPIN = VSS
Current
* These parameters are characterized but not tested.
Data in Typcolumn is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and
are not tested.
When specification values of standard devices differ from those of extended voltage devices, they are shown in gray.
Note 1: This is the limit to which VDD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature also have an impact
on the current consumption. The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4: For RC osc mode, current through REXT is not included. The current through the resistor can be estimated by
the formula Ir = VDD/2REXT (mA) with REXT in kOhm.
5: Timer1 oscillator (when enabled) adds approximately 20 µA to the specification. This value is from character-
ization and is for design guidance only. This is not tested.
6: The current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7: When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.
8: In RC oscillator mode, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended that the
PICmicro device be driven with external clock in RC mode.
9: The leakage current on the MCLR/VPP pin is strongly dependent on the applied voltage level. The specified lev-
els represent normal operating conditions. Higher leakage current may be measured at different input voltages.
10: Negative current is defined as current sourced by the pin.
2000 Microchip Technology Inc.
DS30605C-page 119

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]