PIC16LC66T-04E/TQ View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16LC66T-04E/TQ

8-Bit CMOS Microcontrollers

Microchip Technology 

PIC16C6X

Applicable Devices 61 62 62A R62 63 R63 64 64A R64 65 65A R65 66 67

23.1 DC Characteristics: PIC16C66/67-04 (Commercial, Industrial, Extended)

PIC16C66/67-10 (Commercial, Industrial, Extended)

PIC16C66/67-20 (Commercial, Industrial, Extended)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40˚C ≤ TA ≤ +125˚C for extended,

-40˚C ≤ TA ≤ +85˚C for industrial and

0˚C ≤ TA ≤ +70˚C for commercial

Param

No.

Characteristic

Sym Min Typ† Max Units

Conditions

D001 Supply Voltage

D001A

VDD 4.0 - 6.0 V XT, RC and LP osc configuration

4.5 - 5.5 V HS osc configuration

D002* RAM Data Retention

Voltage (Note 1)

VDR

- 1.5 - V

D003

VDD start voltage to

ensure internal Power-on

Reset signal

VPOR

- VSS -

V See section on Power-on Reset for details

D004* VDD rise rate to ensure SVDD 0.05 -

internal Power-on Reset

signal

- V/ms See section on Power-on Reset for details

D005 Brown-out Reset Voltage BVDD 3.7 4.0 4.3 V BODEN configuration bit is enabled

3.7 4.0 4.4 V Extended Range Only

D010 Supply Current (Note 2, 5) IDD

- 2.7 5 mA XT, RC, osc config FOSC = 4 MHz, VDD = 5.5V

(Note 4)

D013

- 10 20 mA HS osc config

FOSC = 20 MHz, VDD = 5.5V

D015* Brown-out Reset Current ∆IBOR - 350 425 µA BOR enabled, VDD = 5.0V

(Note 6)

D020 Power-down Current

IPD

- 10.5 42 µA VDD = 4.0V, WDT enabled,-40°C to +85°C

D021 (Note 3, 5)

- 1.5 16 µA VDD = 4.0V, WDT disabled,-0°C to +70°C

D021A

- 1.5 19 µA VDD = 4.0V, WDT disabled,-40°C to +85°C

D021B

- 2.5 19 µA VDD = 4.0V, WDT disabled,-40°C to +125°C

D023* Brown-out Reset Current ∆IBOR - 350 425 µA BOR enabled, VDD = 5.0V

(Note 6)

* These parameters are characterized but not tested.

† Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance only

and are not tested.

Note 1: This is the limit to which VDD can be lowered without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin

loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an

impact on the current consumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

3: The power down current in SLEEP mode does not depend on the oscillator type. Power-down current is mea-

sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-

mated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.

5: Timer1 oscillator (when enabled) adds approximately 20 µA to the specification. This value is from character-

ization and is for design guidance only. This is not tested.

6: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be

added to the base IDD or IPD measurement.

DS30234D-page 264

© 1997 Microchip Technology Inc.

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