DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PIC16LC773I/SO View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC16LC773I/SO
Microchip
Microchip Technology 
PIC16LC773I/SO Datasheet PDF : 202 Pages
First Prev 151 152 153 154 155 156 157 158 159 160 Next Last
PIC16C77X
15.2 DC Characteristics:PIC16LC77X-04 (Commercial, Industrial)
DC CHARACTERISTICS
Param
No.
Characteristic
D001 Supply Voltage
Sym
VDD
D002*
D003
D004*
D010
RAM Data Retention
VDR
Voltage (Note 1)
VDD start voltage to
VPOR
ensure internal Power-on
Reset signal
VDD rise rate to ensure
internal Power-on Reset
signal
SVDD
Supply Current (Note 2) IDD
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial and
0°C TA +70°C for commercial
Min Typ† Max Units
Conditions
2.5 5.5
1.5 —
V LP, XT, RC osc configuration (DC - 4
MHz)
V
— VSS
V See section on Power-on Reset for
details
0.05 — — V/ms See section on Power-on Reset for
details. PWRT enabled
— 2.0 3.8 mA XT, RC osc configuration
FOSC = 4 MHz, VDD = 3.0V (Note 4)
D010A
— 22.5 48 A LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT dis-
abled
D020 Power-down Current
IPD
D020A (Note 3)
— 0.9 5 A VDD = 3.0V, 0C to +70C
— 0.9 5 A VDD = 3.0V, -40C to +85C
Module Differential Cur-
rent (note5)
D021 Watchdog Timer
IWDT
6 20 A VDD = 3.0V
D023* Brown-out Reset Current IBOR
(Note 5)
TBD 200 — A BOR enabled, VDD = 5.0V
D025* Timer1 oscillator
IT1OSC — 1.5 3 A VDD = 3.0V
D026* A/D Converter
IAD
— 300 — A VDD = 5.5V, A/D on, not converting
* These parameters are characterized but not tested.
† Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which VDD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-
mated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.
5: The current is the additional current consumed when the peripheral is enabled. This current should be
added to the base (IPD or IDD) current.
1999-2013 Microchip Technology Inc.
Advance Information
DS30275B-page 153

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]