PIC16CE623-04I/SS View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16CE623-04I/SS

OTP 8-Bit CMOS MCU with EEPROM Data Memory

Microchip Technology 

PIC16CE62X

13.0 ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings †

Ambient Temperature under bias .............................................................................................................. -40° to +125°C

Storage Temperature ................................................................................................................................ -65° to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR)........................................................-0.6V to VDD +0.6V

Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.0V

Voltage on RA4 with respect to VSS...........................................................................................................................8.5V

Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V

Voltage on RA4 with respect to VSS...........................................................................................................................8.5V

Total power Dissipation (Note 1) ...............................................................................................................................1.0W

Maximum Current out of VSS pin...........................................................................................................................300 mA

Maximum Current into VDD pin .............................................................................................................................250 mA

Input Clamp Current, IIK (VI <0 or VI> VDD) ...................................................................................................................... ±20 mA

Output Clamp Current, IOK (VO <0 or VO>VDD)................................................................................................................ ±20 mA

Maximum Output Current sunk by any I/O pin ........................................................................................................25 mA

Maximum Output Current sourced by any I/O pin...................................................................................................25 mA

Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA

Maximum Current sourced by PORTA and PORTB ..............................................................................................200 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,

a series resistor of 50-100¾ should be used when applying a "low" level to the MCLR pin rather than pulling

this pin directly to VSS.

† NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above

those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

© 1999 Microchip Technology Inc.

DS40182C-page 83

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