PIC12F/LF1822/16F/LF1823
TABLE 29-2: OSCILLATOR PARAMETERS
Standard Operating Conditions (unless otherwise stated)
Operating Temperature -40°C TA +125°C
Param
No.
Sym.
Characteristic
Freq.
Tolerance
OS08 HFOSC Internal Calibrated HFINTOSC
Frequency(2)
OS08A MFOSC Internal Calibrated MFINTOSC
Frequency(2)
OS10* TIOSC ST HFINTOSC
Wake-up from Sleep Start-up Time
2%
2.5%
5%
2%
2.5%
5%
—
Min.
—
—
—
—
—
—
—
Typ†
16.0
16.0
16.0
500
500
500
5
Max. Units
Conditions
— MHz 0°C TA +60°C, VDD 2.5V
— MHz 60°C TA +85°C, VDD 2.5V
— MHz -40°C TA +125°C
— kHz 60°C TA +60°C, VDD 2.5V
— kHz 0°C TA +85°C, VDD 2.5V
— kHz -40°C TA +125°C
8
s
MFINTOSC
Wake-up from Sleep Start-up Time
—
—
20
30
s
*
†
Note 1:
2:
3:
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not
tested.
Instruction cycle period (TCY) equals four times the input oscillator time base period. All specified values are based on
characterization data for that particular oscillator type under standard operating conditions with the device executing code.
Exceeding these specified limits may result in an unstable oscillator operation and/or higher than expected current con-
sumption. All devices are tested to operate at “min” values with an external clock applied to the OSC1 pin. When an exter-
nal clock input is used, the “max” cycle time limit is “DC” (no clock) for all devices.
To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to the device as
possible. 0.1 F and 0.01 F values in parallel are recommended.
By design.
TABLE 29-3: PLL CLOCK TIMING SPECIFICATIONS (VDD = 2.7V TO 5.5V)
Param
No.
Sym.
Characteristic
Min.
Typ†
Max. Units Conditions
F10 FOSC Oscillator Frequency Range
F11
FSYS On-Chip VCO System Frequency
F12 TRC PLL Start-up Time (Lock Time)
4
—
8
MHz
16
—
32 MHz
—
—
2
ms
F13*
CLK CLKOUT Stability (Jitter)
-0.25%
—
+0.25% %
* These parameters are characterized but not tested.
† Data in “Typ” column is at 3V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
2010 Microchip Technology Inc.
Preliminary
DS41413A-page 349