PIC16F1936-ESS View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16F1936-ESS

28/40/44-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt XLP™ Technology

Microchip Technology 

PIC16F193X/LF193X

28.0 ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings(†)

Ambient temperature under bias....................................................................................................... -40°C to +125°C

Storage temperature ........................................................................................................................ -65°C to +150°C

Voltage on VDD with respect to VSS, PIC16F193X ............................................................................. -0.3V to +6.5V

Voltage on VDD with respect to VSS, PIC16LF193X ........................................................................... -0.3V to +4.0V

Voltage on MCLR with respect to Vss ................................................................................................. -0.3V to +9.0V

Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)

Total power dissipation(1) ............................................................................................................................... 800 mW

Maximum current out of VSS pin ...................................................................................................................... 95 mA

Maximum current into VDD pin ......................................................................................................................... 70 mA

Clamp current, IK (VPIN < 0 or VPIN > VDD)................................................................................................................± 20 mA

Maximum output current sunk by any I/O pin.................................................................................................... 25 mA

Maximum output current sourced by any I/O pin .............................................................................................. 25 mA

Maximum current sunk by all ports(2), -40°C ≤ TA ≤ +85°C for industrial ........................................................ 200 mA

Maximum current sunk by all ports(2), -40°C ≤ TA ≤ +125°C for extended........................................................ 90 mA

Maximum current sourced by all ports(2), 40°C ≤ TA ≤ +85°C for industrial ................................................... 140 mA

Maximum current sourced by all ports(2), -40°C ≤ TA ≤ +125°C for extended................................................... 65 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for

extended periods may affect device reliability.

© 2009 Microchip Technology Inc.

Preliminary

DS41364B-page 355

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