PIC16F616T-I/SL View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC16F616T-I/SL Datasheet PDF : 214 Pages
| |||
PIC16F610/616/16HV610/616
15.2 DC Characteristics: PIC16F610/616-I (Industrial)
PIC16F610/616-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min Typ†
Max Units
VDD
Conditions
Note
D010 Supply Current (IDD)(1, 2) —
13
25
μA
2.0 FOSC = 32 kHz
PIC16F610/616
—
19
29
μA
3.0 LP Oscillator mode
—
32
51
μA
5.0
D011*
— 135 225 μA
— 185 285 μA
2.0 FOSC = 1 MHz
3.0 XT Oscillator mode
— 300 405 μA
5.0
D012
— 240 360 μA
— 360 505 μA
2.0 FOSC = 4 MHz
3.0 XT Oscillator mode
— 0.66 1.0 mA 5.0
D013*
—
75
110
μA
— 155 255 μA
2.0 FOSC = 1 MHz
3.0 EC Oscillator mode
— 345 530 μA
5.0
D014
— 185 255 μA
— 325 475 μA
2.0 FOSC = 4 MHz
3.0 EC Oscillator mode
— 0.665 1.0 mA 5.0
D016*
— 245 340 μA
— 360 485 μA
2.0 FOSC = 4 MHz
3.0 INTOSC mode
— 0.620 0.845 mA 5.0
D017
— 395 550 μA
— 0.620 0.850 mA
2.0 FOSC = 8 MHz
3.0 INTOSC mode
— 1.2 1.6 mA 5.0
D018
— 175 235 μA
— 285 390 μA
2.0 FOSC = 4 MHz
3.0 EXTRC mode(3)
— 530 750 μA
5.0
D019
—
2.2
3.1
mA
4.5 FOSC = 20 MHz
—
2.8 3.35 mA
5.0 HS Oscillator mode
*
†
Note 1:
2:
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave,
from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have
an impact on the current consumption.
3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can
be extended by the formula IR = VDD/2REXT (mA) with REXT in kΩ.
© 2009 Microchip Technology Inc.
DS41288F-page 147
Share Link: 