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PIC16F688T-E/ML View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC16F688T-E/ML Datasheet PDF : 202 Pages
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PIC16F688
14.3 DC Characteristics: PIC16F688-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
Param
No.
Device Characteristics
Min
Typ†
Max Units
VDD
Conditions
Note
D020 Power-down Base
Current(IPD)(2)
D021
D022
D023
D024
D025*
D026
D027
— 0.05 1.2 μA
— 0.15 1.5 μA
— 0.35 1.8 μA
— 150 500 nA
— 1.0 2.2 μA
— 2.0 4.0 μA
— 3.0 7.0 μA
42
60
μA
85
122
μA
32
45
μA
60
78
μA
— 120 160 μA
30
36
μA
45
55
μA
75
95
μA
39
47
μA
59
72
μA
98
124
μA
— 4.5 7.0 μA
— 5.0 8.0 μA
— 6.0
12
μA
— 0.30 1.6 μA
— 0.36 1.9 μA
2.0 WDT, BOR, Comparators, VREF and
3.0 T1OSC disabled
5.0
3.0 -40°C TA +25°C
2.0 WDT Current(1)
3.0
5.0
3.0 BOR Current(1)
5.0
2.0 Comparator Current(1), both
3.0 comparators enabled
5.0
2.0 CVREF Current(1) (high range)
3.0
5.0
2.0 CVREF Current(1) (low range)
3.0
5.0
2.0 T1OSC Current(1), 32.768 kHz
3.0
5.0
3.0 A/D Current(1), no conversion in
5.0 progress
*
Note 1:
2:
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
© 2007 Microchip Technology Inc.
DS41203D-page 147

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