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PIC16LF1902-ESS View Datasheet(PDF) - Microchip Technology

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Description
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PIC16LF1902-ESS Datasheet PDF : 236 Pages
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PIC16LF1902/3
21.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +125°C
Param
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
Program Memory
Programming Specifications
D110 VIHH Voltage on MCLR/VPP/RE3 pin
8.0
9.0
V (Note 2, Note 3)
D111 IDDP Supply Current during
Programming
10
mA
D112
VDD for Bulk Erase
2.7
VDD
V
max.
D113 VPEW VDD for Write or Row Erase
VDD
min.
VDD
V
max.
D114 IPPPGM Current on MCLR/VPP during Erase/
Write
D115 IDDPGM Current on VDD during Erase/Write
1.0
mA
5.0
mA
Program Flash Memory
D121 EP
Cell Endurance
10K
— E/W -40C to +85C (Note 1)
D122 VPR VDD for Read
VDD
min.
VDD
V
max.
D123 TIW Self-timed Write Cycle Time
2
2.5
ms
D124 TRETD Characteristic Retention
40
— Year Provided no other
specifications are violated
Note 1:
2:
3:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
2011 Microchip Technology Inc.
Preliminary
DS41455A-page 201

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