PIC18LF1320T-I/SOSQTP View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18LF1320T-I/SOSQTP

18/20/28-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

Microchip Technology 

PIC18F1220/1320

TABLE 22-1: MEMORY PROGRAMMING REQUIREMENTS

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for industrial

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

Internal Program Memory

Programming Specifications(1)

D110 VPP Voltage on MCLR/VPP pin

9.00

— 13.25 V (Note 2)

D112 IPP Current into MCLR/VPP pin

—

—

5

μA

D113 IDDP Supply Current during

Programming

—

—

10 mA

Data EEPROM Memory

D120 ED Byte Endurance

100K 1M

— E/W -40°C to +85°C

D121 VDRW VDD for Read/Write

VMIN

—

5.5

V Using EECON to read/write

VMIN = Minimum operating

voltage

D122 TDEW Erase/Write Cycle Time

—

4

—

ms

D123 TRETD Characteristic Retention

40

—

— Year Provided no other

specifications are violated

D124 TREF Number of Total Erase/Write

Cycles before Refresh(3)

1M

10M

— E/W -40°C to +85°C

Program Flash Memory

D130 EP Cell Endurance

10K 100K — E/W -40°C to +85°C

D131 VPR VDD for Read

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D132 VIE VDD for Block Erase

4.5

—

5.5

V Using ICSP port

D132A VIW VDD for Externally Timed Erase

4.5

—

5.5

V Using ICSP port

or Write

D132B VPEW VDD for Self-Timed Write

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D133 TIE ICSP™ Block Erase Cycle Time —

4

—

ms VDD > 4.5V

D133A TIW ICSP Erase or Write Cycle Time 1

(externally timed)

—

—

ms VDD > 4.5V

D133A TIW Self-Timed Write Cycle Time

—

2

—

ms

D134 TRETD Characteristic Retention

40

—

— Year Provided no other

specifications are violated

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: These specifications are for programming the on-chip program memory through the use of table write

instructions.

2: The pin may be kept in this range at times other than programming, but it is not recommended.

3: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM

endurance.

DS39605F-page 252

© 2007 Microchip Technology Inc.

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