PIC18F4431T-I/P View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18F4431T-I/P

28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D

Microchip Technology 

PIC18F2331/2431/4331/4431

TABLE 26-20: A/D CONVERTER CHARACTERISTICS

PIC18LF2331/2431/4331/4431

(Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C  TA  +85°C for industrial

PIC18F2331/2431/4331/4431

(Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C  TA  +85°C for industrial

-40°C  TA  +125°C for extended

Param

No.

Symbol

Characteristic

Min

Typ

Max

Units

Conditions

Device Supply

AVDD Analog VDD Supply

VDD – 0.3

—

VDD + 0.3

V

AVSS Analog VSS Supply

VSS – 0.3

—

VSS + 0.3

V

IAD

Module Current

(during conversion)

—

500

—

250

—

A VDD = 5V

—

A VDD = 2.5V

IADO

Module Current Off

—

—

1.0

A

AC Timing Parameters

A10 FTHR Throughput Rate

—

—

200

ksps VDD = 5V, single channel

—

—

75

ksps VDD < 3V, single channel

A11 TAD

A/D Clock Period

385

—

20,000

ns VDD = 5V

1000

—

20,000

ns VDD = 3V

A12 TRC

A/D Internal RC Oscillator Period

—

500

1500

ns PIC18F parts

—

750

2250

ns PIC18LF parts

—

10000

20000

ns AVDD < 3.0V

A13 TCNV

Conversion Time(1)

12

12

12

TAD

A14 TACQ

Acquisition Time(2)

2(2)

—

—

TAD

A16 TTC

Conversion Start from External

1/4 TCY

—

—

Reference Inputs

A20 VREF

Reference Voltage for 10-Bit

Resolution (VREF+ – VREF-)

1.5

—

AVDD – AVSS V VDD 3V

1.8

—

AVDD – AVSS V VDD < 3V

A21 VREFH Reference Voltage High (AVDD or VREF+) 1.5V

—

AVDD

V VDD 3V

A22 VREFL Reference Voltage Low (AVSS or VREF-)

AVSS

—

VREFH – 1.5V V

A23 IREF

Reference Current

—

150 A

—

—

75 A

—

VDD = 5V

VDD = 2.5V

Analog Input Characteristics

A26 VAIN

Input Voltage(3)

AVSS – 0.3

—

AVDD + 0.3 V

A30 ZAIN

Recommended Impedance of Analog

—

—

2.5

k

Voltage Source

A31 ZCHIN Analog Channel Input Impedance

—

—

10.0

k VDD = 3.0V

DC Performance

A41 NR

Resolution

10 bits

—

A42 EIL

Integral Nonlinearity

—

—

<1

LSb VDD  3.0V

VREFH  3.0V

A43 EIL

Differential Nonlinearity

—

—

<1

LSb VDD  3.0V

VREFH  3.0V

A45 EOFF Offset Error

—

0.5

<1.5

LSb VDD  3.0V

VREFH  3.0V

A46 EGA

Gain Error

—

0.5

<1.5

LSb VDD  3.0V

VREFH  3.0V

A47 —

Monotonicity(4)

guaranteed

— VDD  3.0V

VREFH  3.0V

Note 1:

2:

3:

4:

Conversion time does not include acquisition time. See Section 21.0 “10-Bit High-Speed Analog-to-Digital Converter

(A/D) Module” for a full discussion of acquisition time requirements.

In Sequential modes, TACQ should be 12 TAD or greater.

For VDD < 2.7V and temperature below 0°C, VAIN should be limited to range < VDD/2.

The A/D conversion result never decreases with an increase in the input voltage and has no missing codes.

 2010 Microchip Technology Inc.

DS39616D-page 361

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