PIC18F4539T-IML View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18F4539T-IML

Enhanced FLASH Microcontrollers with Single Phase Induction Motor Control Kernel

Microchip Technology 

PIC18FXX39

TABLE 23-2: MEMORY PROGRAMMING REQUIREMENTS

DC Characteristics

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C  TA  +85°C for industrial

-40°C  TA  +125°C for extended

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

Internal Program Memory

Programming Specifications

D110 VPP Voltage on MCLR/VPP pin

D113 IDDP Supply Current during

Programming

9.00

—

— 13.25 V

—

10 mA

D120

D121

ED

VDRW

Data EEPROM Memory

Cell Endurance

VDD for Read/Write

100K

1M

VMIN

—

D122 TDEW Erase/Write Cycle Time

D123 TRETD Characteristic Retention

—

4

40

—

D123A TRETD Characteristic Retention

D124 TREF Number of Total Erase/Write

Cycles before Refresh(2)

Program FLASH Memory

D130 EP Cell Endurance

D131 VPR VDD for Read

100

—

1M

10M

10K

VMIN

100K

—

D132 VIE VDD for Block Erase

4.5

—

D132A VIW VDD for Externally Timed Erase 4.5

—

or Write

D132B VPEW VDD for Self-timed Write

VMIN

—

D133 TIE ICSP Block Erase Cycle Time

—

4

D133A TIW ICSP Erase or Write Cycle Time 1

—

(externally timed)

D133A TIW Self-timed Write Cycle Time

—

2

D134 TRETD Characteristic Retention

40

—

D134A TRETD Characteristic Retention

100

—

— E/W -40C to +85C

5.5 V Using EECON to read/write

VMIN = Minimum operating

voltage

— ms

— Year Provided no other

specifications are violated

— Year 25C (Note 1)

— E/W -40°C to +85°C

— E/W -40C to +85C

5.5 V VMIN = Minimum operating

voltage

5.5 V Using ICSP port

5.5 V Using ICSP port

5.5 V VMIN = Minimum operating

voltage

— ms VDD  4.5V

— ms VDD  4.5V

— ms

— Year Provided no other

specifications are violated

— Year 25C (Note 1)

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: Retention time is valid, provided no other specifications are violated.

2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.

 2002-2013 Microchip Technology Inc.

Preliminary

DS30485B-page 267

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