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PIC18F45J50-I/SOSQTP View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC18F45J50-I/SOSQTP Datasheet PDF : 562 Pages
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PIC18F46J50 FAMILY
TABLE 30-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D130 EP
D131 VPR
Program Flash Memory
Cell Endurance
VDDcore for Read
10K
VMIN
2.75
D132B VPEW VDDCORE for Self-Timed Erase or
Write
D133A TIW Self-Timed Write Cycle Time
D133B TIE
Self-Timed Block Erase Cycle
Time
D134 TRETD Characteristic Retention
2.25
20
2.8
33.0
2.75
D135 IDDP Supply Current during
Programming
3
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
E/W -40C to +85C
V VMIN = Minimum operating
voltage
V
ms 64 bytes
ms
Year Provided no other
specifications are violated
mA
TABLE 30-2: COMPARATOR SPECIFICATIONS
Operating Conditions: 3.0V < VDD < 3.6V, -40°C < TA < +85°C (unless otherwise stated)
Param
No.
Sym
Characteristics
Min
Typ
Max
Units Comments
D300
D301
D302
D303
D304
Note 1:
VIOFF Input Offset Voltage
+/-5
+/-25
mV
VICM
Input Common Mode Voltage
0
VDD
V
VIRV
Internal Reference Voltage
0.57 0.60
0.63
V
CMRR Common Mode Rejection Ratio
55
dB
TRESP Response Time(1)
150
400
ns
TMC2OV Comparator Mode Change to
Output Valid
10
s
Response time measured with one comparator input at VDD/2, while the other input transitions from VSS to
VDD.
DS39931D-page 504
2011 Microchip Technology Inc.

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