PIC18LF2610-I/ML View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18LF2610-I/ML

28/40/44-Pin Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

Microchip Technology 

PIC18F2X1X/4X1X

TABLE 25-1: MEMORY PROGRAMMING REQUIREMENTS

DC Characteristics

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for industrial

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

Internal Program Memory

Programming Specifications(1)

D110 VPP Voltage on MCLR/VPP/RE3 pin VDD + 4 —

12.5 V (Note 2)

D113 IDDP Supply Current during

Programming

—

10

— mA

Program Flash Memory

D130 EP Cell Endurance

10K 100K

— E/W -40°C to +85°C

D131 VPR VDD for Read

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D132 VIE VDD for Block Erase

4.5

—

5.5

V Using ICSP™ port

D132A VIW VDD for Externally Timed Erase 4.5

—

5.5

V Using ICSP port

or Write

D133 TIE ICSP Block Erase Cycle Time

—

4

—

ms VDD > 4.5V

D133A TIW ICSP Erase or Write Cycle Time 1

(externally timed)

—

—

ms VDD > 4.5V

D134 TRETD Characteristic Retention

40

100

— Year Provided no other

specifications are violated

†

Note 1:

2:

Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

These specifications are for programming the on-chip program memory through the use of table write

instructions.

Required only if Single-Supply programming is disabled.

DS39636C-page 326

Preliminary

© 2007 Microchip Technology Inc.

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