PIC18F258-I/SP View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC18F258-I/SP
Microchip Technology
PIC18F258-I/SP Datasheet PDF : 402 Pages
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PIC18FXX8
TABLE 27-2: DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
DC Characteristics
Standard Operating Conditions
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications
D110 VPP Voltage on MCLR/VPP pin
9.00
— 13.25 V
D113 IDDP Supply Current during
Programming
—
—
10 mA
Data EEPROM Memory
D120 ED Cell Endurance
100K 1M
— E/W -40°C to +85°C
D120A ED Byte Endurance
10K 100K — E/W +85°C to +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5 V Using EECON to read/write
VMIN = Minimum operating voltage
D122 TDEW Erase/Write Cycle Time
—
4
— ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
D124
TREF Number of Total Erase/Write
1M
Cycles to Data EEPROM before
Refresh*
10M
— Cycles -40°C to +85°C
D124A TREF Number of Total Erase/Write
Cycles before Refresh*
100K 1M
— Cycles +85°C to +125°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D130A EP Cell Endurance
1000 10K — E/W +85°C to +125°C
D131 VPR VDD for Read
VMIN
—
5.5 V VMIN = Minimum operating voltage
D132 VIE VDD for Block Erase
4.5
—
5.5 V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase 4.5
or Write
—
5.5 V Using ICSP port
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5 V VMIN = Minimum operating voltage
D133 TIE ICSP Erase Cycle Time
—
4
— ms VDD ≥ 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
—
— ms VDD ≥ 4.5V
(externally timed)
D133A TIW Self-Timed Write Cycle Time
—
2
— ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
* See Section 5.8 “Using the Data EEPROM” for more information.
© 2006 Microchip Technology Inc.
DS41159E-page 339
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