PIC32MX1XX/2XX
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +105°C for V-temp
Param.
No.
Symbol
Characteristics
Min. Typical(1) Max. Units
Conditions
Program Flash Memory(3)
D130 EP
Cell Endurance
20,000 —
— E/W
—
D131 VPR
VDD for Read
2.3
—
3.6 V
—
D132 VPEW VDD for Erase or Write
2.3
—
3.6 V
—
D134 TRETD Characteristic Retention
20
—
— Year Provided no other specifications
are violated
D135 IDDP Supply Current during
—
10
— mA
—
Programming
TWW Word Write Cycle Time
—
411
—
See Note 4
D136 TRW Row Write Cycle Time
—
6675
—
See Note 2,4
D137 TPE Page Erase Cycle Time
—
20011
—
See Note 4
TCE
Chip Erase Cycle Time
—
80180
—
See Note 4
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus
loads are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The
default Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to the “PIC32 Flash Programming Specification” (DS60001145) for operating conditions during
programming and erase cycles.
4: This parameter depends on FRC accuracy (See Table 29-17) and FRC tuning values (See Register 8-2).
© 2011-2014 Microchip Technology Inc.
DS60001168F-page 253