8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E
4.11 DC Characteristics—Extended Temperature Operation (Continued)
Prod TBE-120
TBV-90
TBV-90
TBE-120
Sym Parameter VCC 2.7 V–3.6 V 3.3 ± 0.3 V 5 V ± 10% Unit Test Conditions
Notes Min Max Min Max Min Max
VID
A9
Intelligent
Identifier
Voltage
11.4 12.6 11.4 12.6 11.4 12.6
VIL
Input Low
Voltage
–0.5 0.8 –0.5 0.8 –0.5 0.8
VIH Input High
Voltage
2.0 VCC 2.0 VCC 2.0 VCC
±
±
±
0.5V
0.5V
0.5V
VOL Output Low
Voltage
0.45
0.45
0.45
VOH1
Output
High
Voltage
(TTL)
2.4
2.4
2.4
VOH2
Output
High
Voltage
0.85
×
VCC
0.85
×
VCC
0.85
×
VCC
(CMOS)
VCC–
VCC–
VCC–
0.4V
0.4V
0.4V
VPPLK VPP
3
Lock-Out
Voltage
VPPH1 VPP during
Prog/Erase
Operations
0.0 1.5 0.0 1.5 0.0 1.5
4.5 5.5 4.5 5.5 4.5 5.5
VPPH2
11.4 12.6 11.4 12.6 11.4 12.6
VLKO VCC
8
2.0
2.0
2.0
Prog/Erase
Lock
Voltage
VHH RP#
Unlock
Voltage
11.4 12.6 11.4 12.6 11.4 12.6
V
V
V
V VCC = VCC Min
VPP = 12V
IOL = 5.8 mA (5 V)
2 mA (3.3 V)
V VCC = VCC Min
IOH = –2.5 mA
V VCC = VCC Min
IOH = –2.5 mA
VCC = VCC Min
IOH = –100 µA
V Complete Write
Protection
V VPP at 5 V
V VPP at 12 V
V
V Boot Block Program/
Erase
VPP = 12 V
48
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