R5F21256SDFP-V2(2010) View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
R5F21256SDFP-V2 Datasheet PDF : 61 Pages
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R8C/24 Group, R8C/25 Group
5. Electrical Characteristics
Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol
−
−
−
−
−
td(SR-SUS)
−
−
−
−
−
−
−
Parameter
Conditions
Min.
Program/erase endurance(2)
10,000(3)
Byte program time
−
(program/erase endurance ≤ 1,000 times)
Byte program time
−
(program/erase endurance > 1,000 times)
Block erase time
−
(program/erase endurance ≤ 1,000 times)
Block erase time
−
(program/erase endurance > 1,000 times)
Time delay from suspend request until
−
suspend
Interval from erase start/restart until
650
following suspend request
Interval from program start/restart until
0
following suspend request
Time from suspend until program/erase
−
restart
Program, erase voltage
2.7
Read voltage
2.2
Program, erase temperature
-20(8)
Data hold time(9)
Ambient temperature = 55 °C 20
Standard
Typ.
−
50
Max.
−
400
Unit
times
µs
65
−
µs
0.2
9
s
0.3
−
s
− 97+CPU clock µs
× 6 cycles
−
−
µs
−
−
ns
− 3+CPU clock µs
× 4 cycles
−
5.5
V
−
5.5
V
−
85
°C
−
−
year
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. -40°C for D version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.3.00 Feb 29, 2008 Page 29 of 51
REJ03B0117-0300
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